|
Alox湿法氧化系统
收藏
Up to 6” wafers : edge exclusion 5 mm Selective oxidation process Oxide aperture uniformity max – min < 0.8 µm* Tight flow control of moisturized gas : 0,6 to 30 g/h Vacuum atmosphere : <10 to 800 mbar absolute Stabilized temperature 350°C to 600°C Full control / supervision of machine Programming of recipes Automatic monitoring software to stop mesa oxidation attargeted operture (optional) Run-to-run deviation σ < 0.2 μm * * For common results, depending on wafer
|